15gn03ma no. a1108-1/8 applications ? vhf, rf, mixer, osc, if ampli er features ? high cut-off frequency : f t =1.5ghz typ ? high gain : ? s21e ? 2 =13db typ (f=0.4ghz) ? ultrasmall package permitting applied sets to be small and slim speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 10 v emitter-to-base voltage v ebo 3v collector current i c 70 ma collector dissipation p c when mounted on ceramic substrate (250mm 2 0.8mm) 400 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7023a-009 ordering number : ena1108a 71812 tkim/o2908ab msim tc-00001669 15gn03ma npn epitaxial planar silicon transistor vhf high-frequency ampli er applications http:// semicon.sanyo.com/en/network sanyo semiconductors data sheet product & package information ? package : mcp ? jeita, jedec : sc-70, sot-323 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection zc lot no. lot no. tl 1 : base 2 : emitter 3 : collector sanyo : mcp 3 12 2.0 0.425 0.425 0.3 0.65 2.1 0.9 1.25 0.3 0.2 0 to 0.08 0.15 15gn03ma-tl-e 3 2 1
15gn03ma no. a1108-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =10v, i e =0a 0.1 a emitter cutoff current i ebo v eb =2v, i c =0a 1 a dc current gain h fe v ce =5v, i c =10ma 100 180 gain-bandwidth product f t v ce =5v, i c =20ma 1.0 1.5 ghz output capacitance cob v cb =10v, f=1mhz 0.95 1.25 pf reverse transfer capacitance cre 0.65 pf forward transfer gain ? s21e ? 2 v ce =5v, i c =20ma, f=0.4ghz 10 13 db noise figure nf v ce =3v, i c =2ma, f=0.4ghz 1.6 db ordering information device package shipping memo 15gn03ma-tl-e mcp 3,000pcs./reel pb free 0246810 0 10 20 30 40 50 60 70 80 90 100 collector-to-emitter voltage, v ce -- v collector current, i c -- m a i c -- v ce it08096 i b =0ma 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 80 70 60 base-to-emitter voltage, v be -- v collector current, i c -- m a it08097 i c -- v be 5 7 100 2 3 5 7 1.0 2 3 3 h fe -- i c 1.0 23 57 10 23 57 100 1.0 23 57 10 23 57 100 collector current, i c -- ma dc current gain, h fe it08098 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma v ce =5v f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- ghz it08099 v ce =5v v ce =5v
15gn03ma no. a1108-3/8 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 350 400 450 it08104 collector dissipation, p c -- mw p c -- ta 1.0 23 57 23 57 10 100 ? s21e ? 2 -- i c collector current, i c -- ma ambient temperature, ta -- c forward transfer gain, ? s21e ? 2 -- db it08102 collector current, i c -- ma noise figure, nf -- db it08103 nf -- i c 5 7 2 3 1.0 5 7 2 3 1.0 collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf it08101 cre -- v cb 0.1 22 35 5 7237 1.0 10 0.1 22 35 5 7237 1.0 10 cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf it08100 f=1mhz f=1mhz 4 6 8 10 12 14 1.0 10 357 235 5 723 2 3 5 7 10 1.0 z s =50 z s =zsopt v ce =5v f=400mhz v ce =3v f=400mhz when mounted on ceramic substrate (250mm 2 ? 0.8mm)
15gn03ma no. a1108-4/8 s parameters (common emitter) v ce =5v, i c =1ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.927 -39.48 3.051 153.95 0.045 66.57 0.938 -5.28 200 0.877 -72.13 2.643 134.85 0.072 53.42 0.879 -10.12 300 0.831 -97.09 2.258 118.70 0.090 41.89 0.834 -15.17 400 0.796 -115.43 1.925 105.65 0.093 33.66 0.806 -20.70 500 0.772 -128.51 1.645 95.12 0.090 29.42 0.796 -25.57 600 0.759 -139.76 1.420 86.92 0.085 28.20 0.796 -28.96 700 0.754 -148.33 1.255 80.31 0.080 30.19 0.792 -31.48 800 0.750 -155.54 1.132 74.68 0.072 36.45 0.790 -34.42 900 0.746 -162.07 1.033 69.44 0.067 44.81 0.793 -37.89 1000 0.743 -167.59 0.948 65.05 0.065 55.74 0.796 -41.83 v ce =5v, i c =3ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.819 -66.73 7.544 137.99 0.036 55.23 0.862 -14.15 200 0.733 -107.53 5.274 115.44 0.050 43.07 0.730 -17.07 300 0.698 -130.44 3.901 102.51 0.055 40.37 0.691 -20.60 400 0.682 -144.75 3.111 93.53 0.056 41.56 0.673 -22.18 500 0.674 -154.20 2.563 85.87 0.056 46.54 0.680 -25.14 600 0.669 -161.91 2.175 79.64 0.057 53.71 0.686 -28.23 700 0.669 -167.44 1.884 74.61 0.061 62.91 0.686 -30.58 800 0.671 -172.33 1.680 70.09 0.067 70.67 0.690 -33.35 900 0.672 -176.77 1.520 65.76 0.075 78.25 0.695 -36.65 1000 0.672 179.40 1.386 61.98 0.086 83.86 0.700 -40.53 v ce =5v, i c =5ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.745 -85.56 10.487 129.32 0.031 52.32 0.808 -17.13 200 0.673 -125.68 6.596 107.46 0.041 43.79 0.695 -19.72 300 0.650 -144.45 4.641 95.99 0.044 45.46 0.655 -20.94 400 0.643 -155.93 3.583 88.14 0.046 51.02 0.641 -22.34 500 0.641 -163.08 2.926 81.98 0.051 57.47 0.638 -24.48 600 0.641 -169.17 2.468 76.86 0.055 65.57 0.640 -27.05 700 0.642 -173.85 2.139 72.14 0.064 72.10 0.640 -29.96 800 0.645 -177.59 1.898 68.01 0.072 78.01 0.643 -32.86 900 0.648 179.02 1.708 64.03 0.082 84.74 0.654 -36.05 1000 0.649 175.69 1.565 60.67 0.096 88.35 0.663 -39.64 v ce =5v, i c =10ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.648 -111.11 13.755 118.07 0.025 49.17 0.710 -18.60 200 0.617 -144.00 7.787 99.84 0.031 50.50 0.618 -18.94 300 0.610 -157.84 5.322 90.62 0.035 55.71 0.593 -19.18 400 0.611 -165.84 4.071 84.05 0.042 63.53 0.585 -20.81 500 0.612 -171.10 3.295 78.75 0.049 72.26 0.585 -23.14 600 0.616 -175.51 2.770 74.15 0.059 76.93 0.591 -25.68 700 0.620 -179.00 2.401 69.78 0.068 81.33 0.595 -28.62 800 0.622 178.16 2.122 65.84 0.080 85.49 0.598 -31.66 900 0.629 175.42 1.906 62.06 0.091 88.11 0.610 -34.80 1000 0.632 172.79 1.741 58.71 0.104 90.16 0.619 -38.30
15gn03ma no. a1108-5/8 s parameters (common emitter) v ce =5v, i c =15ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.608 -124.26 15.141 112.79 0.021 49.66 0.661 -18.68 200 0.596 -152.05 8.271 96.59 0.028 56.25 0.584 -17.69 300 0.594 -163.33 5.613 88.34 0.034 63.87 0.566 -18.43 400 0.600 -169.82 4.267 82.26 0.042 71.61 0.561 -19.87 500 0.601 -173.91 3.457 77.23 0.052 77.39 0.564 -22.13 600 0.606 -177.77 2.902 72.65 0.061 81.90 0.570 -24.90 700 0.613 179.41 2.501 68.50 0.071 84.02 0.573 -27.96 800 0.617 176.72 2.210 64.59 0.083 86.75 0.579 -30.98 900 0.624 174.31 1.988 60.86 0.094 88.46 0.592 -34.26 1000 0.628 171.96 1.808 57.39 0.108 90.57 0.599 -37.51 v ce =5v, i c =20ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.587 -132.33 15.887 109.73 0.018 50.98 0.630 -18.23 200 0.589 -156.83 8.517 94.77 0.026 60.57 0.563 -17.10 300 0.590 -166.31 5.751 86.97 0.034 66.88 0.549 -17.73 400 0.593 -171.88 4.373 80.95 0.043 73.76 0.547 -19.30 500 0.598 -175.61 3.529 76.08 0.052 79.21 0.552 -21.55 600 0.604 -178.89 2.958 71.70 0.063 82.86 0.558 -24.41 700 0.611 178.36 2.550 67.43 0.073 85.71 0.560 -27.19 800 0.616 176.07 2.257 63.56 0.085 87.76 0.569 -30.31 900 0.624 173.75 2.026 59.99 0.097 89.02 0.581 -33.63 1000 0.628 171.39 1.838 56.47 0.109 90.88 0.590 -36.92 v ce =5v, i c =30ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.574 -141.90 16.518 106.28 0.017 56.75 0.594 -17.60 200 0.584 -161.69 8.702 92.68 0.024 65.21 0.541 -16.13 300 0.587 -169.42 5.851 85.19 0.033 71.56 0.531 -16.69 400 0.596 -174.12 4.433 79.42 0.042 77.01 0.532 -18.41 500 0.599 -177.29 3.570 74.54 0.053 82.34 0.536 -20.78 600 0.609 179.93 2.987 70.07 0.063 84.47 0.545 -23.60 700 0.616 177.48 2.574 65.88 0.073 86.83 0.550 -26.54 800 0.621 175.27 2.268 61.99 0.085 88.18 0.559 -29.78 900 0.631 173.12 2.033 58.20 0.096 90.72 0.571 -33.08 1000 0.638 170.96 1.845 54.81 0.111 91.80 0.582 -36.46 v ce =5v, i c =50ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.578 -151.54 16.222 102.78 0.015 58.15 0.564 -16.24 200 0.596 -166.79 8.428 90.13 0.023 71.59 0.524 -14.78 300 0.603 -172.63 5.641 82.89 0.033 76.27 0.520 -15.94 400 0.611 -176.28 4.254 77.21 0.043 79.95 0.521 -17.71 500 0.618 -178.98 3.421 72.11 0.052 83.78 0.530 -20.31 600 0.629 178.44 2.851 67.60 0.064 86.83 0.538 -23.39 700 0.639 176.23 2.452 63.15 0.074 88.24 0.546 -26.40 800 0.647 174.01 2.155 59.33 0.087 89.54 0.555 -29.74 900 0.657 171.87 1.921 55.44 0.099 92.59 0.568 -33.37 1000 0.664 169.65 1.740 51.95 0.113 94.10 0.581 -36.94
15gn03ma no. a1108-6/8 embossed taping speci cation 15gn03ma-tl-e
15gn03ma no. a1108-7/8 outline drawing land pattern example 15gn03ma-tl-e mass (g) unit 0.006 * for reference mm unit: mm 0.65 0.65 2.1 0.7 1.0
15gn03ma no. a1108-8/8 ps this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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